The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication systems and the power electronics needed for state-of-the-art data centers.

Unfortunately, the high cost of gallium nitride (GaN) and the specialization required to incorporate this semiconductor material into conventional electronics have limited its use in commercial applications.

Now, researchers from MIT and elsewhere have developed a new fabrication process that integrates high-performance GaN transistors onto standard silicon CMOS chips in a way that is low-cost and scalable, and compatible with existing semiconductor foundries.

Their method involves building many tiny transistors on the surface of a GaN chip, cutting out each individual transistor, and then bonding just the necessary number of transistors onto a silicon chip using a low-temperature process that preserves the functionality of both materials.

The cost remains minimal since only a tiny amount of GaN material is added to the chip, but the resulting device can receive a significant performance boost from compact, high-speed transistors. In addition, by separating the GaN circuit into discrete transistors that can be spread over the silicon chip, the new technology is able to reduce the temperature of the overall system.

Para leer más ingrese a:

https://news.mit.edu/2025/new-3d-chips-could-make-electronics-faster-and-more-energy-efficient-0618